| PART |
Description |
Maker |
| IRFB4410ZGPBF |
HEXFETPower MOSFET
|
International Rectifier
|
| IRFB4321GPBF |
HEXFETPower MOSFET
|
International Rectifier
|
| IRLM6402GPBF IRLML6402GPBF |
HEXFETPower MOSFET
HEXFET Power MOSFET
|
International Rectifier
|
| IRFB3206GPBF IRFB3077GPBF |
HEXFETPower MOSFET
High Efficiency Synchronous Rectification in SMPS
|
International Rectifier
|
| IRLML0030TRPBF |
HEXFETpower MOSFET Compatible with existing Surface Mount Techniques Lower switching losses
|
TY Semiconductor Co., Ltd
|
| FTD2017 |
Load Switching Applications 负荷开关应
N-Channel Silicon MOSFET Load Switching Applications
|
Sanyo Electric Co., Ltd.
Sanyo Semicon Device
|
| LMN200B021 LMN200B02 |
200 mA LOAD SWITCH PRE-BIASED PNP TRANSISTOR AND N-MOSFET WITH GATE PULL DOWN RESISTOR
200 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET
200 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET
|
Diodes Incorporated
|
| NTGD1100LT1G NTGD1100LT1 NTGD1100L |
Power MOSFET 8 V, .3 A, Load Switch with Level−Shift, P−Channel, TSOP−6 3300 mA, 8 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
Power MOSFET 8 V, ?.3 A, Load Switch with Level−Shift, P−Channel, TSOP−6
Power MOSFET 8 V, ?.3 A, Load Switch with Level−Shift, P−Channel, TSOP−6
|
ONSEMI[ON Semiconductor]
|
| FW111 |
P-Channel Silicon MOSFET Load S/W Applications
|
Sanyo Semicon Device
|
| ISL6622A ISL6610 ISL6610A ISL6612 ISL6612A ISL6614 |
VR11.1, 4-Phase PWM Controller with Light Load Efficiency Enhancement and Load Current Monitoring
|
Intersil Corporation
|
| ISL6334AIRZR5368 ISL6334ACRZR5368 ISL6334AR5368 |
VR11.1, 4-Phase PWM Controller with Light Load Efficiency Enhancement and Load Current Monitoring Features
|
Intersil Corporation
|
